Photonic and Electronic Integration of 2DM Quantum Emitters

Single quantum emitters (SQEs) in two-dimensional (2D) materials offer a promising platform for quantum-light generation with compatibility for electrostatic control, van der Waals heterostructures, and nanophotonic integration. This review summarizes recent progress in integrating SQEs in transition metal dichalcogenides (TMDs) and hexagonal boron nitride (hBN) with electrical and photonic device structures. We discuss electrically driven emission, electrostatic tuning and charge stabilization, and the device and circuit considerations relevant to high-rate pulsed operation. We further review waveguide, on-chip resonator, and off-chip cavity platforms designed to improve emission collection, directionality, and radiative performance. Across these developments, we highlight how material properties, device geometry, and the local electromagnetic and electrostatic environment influence key source characteristics, including single-photon purity, brightness, spectral stability, linewidth, coherence, and photon indistinguishability. Particular attention is given to the distinct opportunities and constraints of localized defect-bound excitons in TMDs and defect-based color centers in hBN. We identify remaining challenges in reproducible electrical operation, low-noise device environments, spectral matching, and scalable optical interfacing. Together, these advances establish a foundation for integrated 2D-material quantum-light sources with controllable emission and efficient optical functionality.